inchange semiconductor isc product specification isc silicon npn power transistor BU999 description collector-emitter sustaining voltage- : v ceo(sus) = 140v(min) high switching speed high power dissipation applications designed for switching and linear applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 160 v v ceo collector-emitter voltage 140 v v ebo emitter-base voltage 6 v i c collector current-continuous 25 a i cp collector current-pulse 40 a i b b base current-continuous 10 a p c collector power dissipation @ t c =25 106 w t j junction temperature 200 t stg storage temperature range -55~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.08 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU999 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 50ma; i b = 0 140 v v ce (sat)-1 collector-emitter saturation voltage i c = 10a; i b = 1a 0.8 v v ce (sat)-2 collector-emitter saturation voltage i c = 25a; i b = 2.5a 1.5 v v be (sat)-1 base-emitter saturation voltage i c = 10a; i b = 1a 1.8 v v be (sat)-2 base-emitter saturation voltage i c = 25a; i b = 2.5a 2.5 v v be (on) base -emitter on voltage i c = 10a; v ce = 2v 1.8 v i cex collector cutoff current v ce = 140v; v be = -1.5v 10 a i cbo collector cutoff current v cb = 160v; i e = 0 100 a i ceo collector cutoff current v ce = 70v; i b = 0 b 50 a i ebo emitter cutoff current v eb = 6v; i c = 0 100 a h fe-1 dc current gain i c = 0.5a; v ce = 2v 35 h fe-2 dc current gain i c = 10a; v ce = 2v 25 100 h fe-3 dc current gain i c = 25a; v ce = 2v 12 switching times t on turn-on time 0.3 s t stg storage time 1.5 s t f fall time i c = 10a, i b1 = -i b2 = 1a, v cc = 80v 0.25 s isc website www.iscsemi.cn 2
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